High Performance Ultra-Thin Niobium Films for Superconducting Hot-Electron Devices

被引：19
作者：
Jia, X. Q. [1 ]
Kang, L. [1 ]
Liu, X. Y. [2 ]
Wang, Z. H. [3 ]
Jin, B. B. [1 ]
Mi, S. B. [4 ]
Chen, J. [1 ]
Xu, W. W. [1 ]
Wu, P. H. [1 ]
机构：
[1] Nanjing Univ, RISE, Jiangsu Key Lab Adv Manipulat Technol Electromagn, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Sch Phys, Nanjing 210093, Jiangsu, Peoples R China
[4] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2013年 / 23卷 / 03期
基金：
中国国家自然科学基金;
关键词：
High critical current density (J(C)); magnetron sputtering; niobium; superconducting ultra-thin film; NB; XPS; OXIDES;
D O I：
10.1109/TASC.2012.2235508
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality ultrathin film is the key element of hot-electron devices. Using a doped sputtering target, high-performance niobium (Nb) ultrathin films are grown on high-resistivity silicon (Si), magnesium oxide (MgO), and sapphire substrates, optimized by grown 1-nm-thick aluminum nitride (AlN) films on the top. Superconducting transition temperature (T-C) of about 7.5 K and critical current density (J(C)) of about 8.2 x 10(6) A/cm(2) at 4.2 K have been obtained for the Nb film of 6.5 nm thickness on MgO substrates. The results of the films' structural characterization by X-ray photo electronic spectroscopy, atomic force microscopy, transmission electron microscopy, and X-ray diffraction are also presented.
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页数：4
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