High Performance Ultra-Thin Niobium Films for Superconducting Hot-Electron Devices

被引：19

作者：

Jia, X. Q. ^{[1
]}

Kang, L. ^{[1
]}

Liu, X. Y. ^{[2
]}

Wang, Z. H. ^{[3
]}

Jin, B. B. ^{[1
]}

Mi, S. B. ^{[4
]}

Chen, J. ^{[1
]}

Xu, W. W. ^{[1
]}

Wu, P. H. ^{[1
]}

机构：

[1] Nanjing Univ, RISE, Jiangsu Key Lab Adv Manipulat Technol Electromagn, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ, Sch Phys, Nanjing 210093, Jiangsu, Peoples R China

[4] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2013年 / 23卷 / 03期

基金：

中国国家自然科学基金;

关键词：

High critical current density (J(C)); magnetron sputtering; niobium; superconducting ultra-thin film; NB; XPS; OXIDES;

D O I：

10.1109/TASC.2012.2235508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality ultrathin film is the key element of hot-electron devices. Using a doped sputtering target, high-performance niobium (Nb) ultrathin films are grown on high-resistivity silicon (Si), magnesium oxide (MgO), and sapphire substrates, optimized by grown 1-nm-thick aluminum nitride (AlN) films on the top. Superconducting transition temperature (T-C) of about 7.5 K and critical current density (J(C)) of about 8.2 x 10(6) A/cm(2) at 4.2 K have been obtained for the Nb film of 6.5 nm thickness on MgO substrates. The results of the films' structural characterization by X-ray photo electronic spectroscopy, atomic force microscopy, transmission electron microscopy, and X-ray diffraction are also presented.

引用

页数：4

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