Anomalous Hall Effect in Two-dimensional Semiconductors: the Roles of Electron-Impurity and Electron-Phonon Scatterings

被引：0

作者：

Liu, S. Y. ^{[1
]}

Horing, N. J. Morgenstern ^{[2
]}

Lei, X. L. ^{[1
]}

Sawamura, M. ^{[3
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China

[2] Stevens Inst Technol, Dept Phys & Engn, Hoboken, NJ 07030 USA

[3] Hokkaido Univ, CRIS, Div Project Res, Creat Res Initiat Sousei, Sapporo, Hokkaido 0010021, Japan

来源：

2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3 | 2007年

基金：

美国国家科学基金会;

关键词：

Anomalous-Hall-Effect; Electric-Field-Induced-SHE; Impurity & Phonon Scattering; Quantum-Well; Side-Jump; Skew Scattering; Spin-Orbit-Coupling; Temperature;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Taking account of both the electron-impurity and electron-phonon scatterings, the anomalous Hall effect in two dimensional electron systems is investigated by means of a kinetic equation approach. The spin-orbit coupling directly induced by an external driving electric field and the extrinsic spin-orbit coupling (associated with electron-impurity and electron-phonon scatterings) are included. The side-jump and skew-scattering contributions arising from these spin-orbit couplings to anomalous Hall current are expressed in terms of the distribution function. Performing a numerical calculation for InSb/AlInSb quantum wells, we analyze the effects of both electron-impurity and electron-phonon scatterings on anomalous Hall current. The temperature dependence of anomalous Hall current is also studied in the regime O<T<300K.

引用

页码：411 / +

页数：2

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