Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process

被引：140

作者：

Goel, Saurav ^{[1
]}

Luo, Xichun ^{[1
,2
]}

Reuben, Robert L. ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Univ Huddersfield, Sch Comp & Engn, Ctr Precis Technol, Huddersfield HD1 3DH, W Yorkshire, England

来源：

TRIBOLOGY INTERNATIONAL | 2013年 / 57卷

基金：

英国工程与自然科学研究理事会;

关键词：

Single point diamond turning; Tool wear; MD simulation; MOLECULAR-DYNAMICS SIMULATION; MONOCRYSTALLINE SILICON; PHASE-TRANSFORMATION; CUTTING TOOLS; ATOMIC-SCALE; CRYSTALLOGRAPHIC ORIENTATION; QUANTITATIVE ASSESSMENT; RAMAN-SPECTROSCOPY; GROOVE WEAR; DUCTILE;

D O I：

10.1016/j.triboint.2012.06.027

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In this paper, a molecular dynamics simulation has been adopted to arrive at a phenomenological understanding of the wear mechanism of diamond tools against single crystal silicon in the single point diamond turning (SPDT) process. The radial distribution function confirms the formation of silicon carbide at the contact interface, which signals the initiation of wear of the diamond tool. A simultaneous mechanism of sp(3)-sp(2) disorder of the diamond tool was also found to proceed in tandem. This mechanism is corroborated by a recent experimental study, where silicon carbide and. carbon like particles were observed after machining of single crystal silicon with a diamond tool through X-ray photoelectron spectroscope (XPS) technology. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.

引用

页码：272 / 281

页数：10

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