Reduction of graphite oxide to graphene with laser irradiation

被引:165
作者
Trusovas, Romualdas [1 ]
Ratautas, Karolis [1 ]
Raciukaitis, Gediminas [1 ]
Barkauskas, Jurgis [2 ]
Stankeviciene, Inga [2 ]
Niaura, Gediminas [3 ]
Mazeikiene, Regina [3 ]
机构
[1] Ctr Phys Sci & Technol, Dept Laser Technol, Savanoriu Ave 231, LT-02300 Vilnius, Lithuania
[2] Vilnius Univ, Fac Chem, LT-03225 Vilnius, Lithuania
[3] Ctr Phys Sci & Technol, Inst Chem, LT-01108 Vilnius, Lithuania
关键词
SINGLE-LAYER; FILMS; CARBON; TRANSPARENT;
D O I
10.1016/j.carbon.2012.10.017
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Reduction of graphite oxide (GO) to graphene induced by picosecond pulsed laser irradiation has been studied by Raman spectroscopy, scanning electron microscopy together with modeling of temperature dynamics in the materials. Dependence of the D, G, and 2D Raman band parameters on the laser pulse energy and the irradiation dose was evaluated. The exponential decline of the full width at half maximum of the Raman lines with increasing product of the pulse energy and irradiation dose was observed indicating ordering in the film and reduction in the number of graphene layers during the laser treatment. The minimum concentration of structural defects and the largest relative intensity of the 2D peak were found for the 50 mW mean laser power and the 30 mm/s scanning speed. Modeling of temperature dynamics revealed that the temperature of the GO film irradiated with a single laser pulse at a fluence of 0.04 J/cm(2) (50 mW) increased up to 1400 degrees C for a few nanoseconds, which was sufficient for the effective reduction of GO to graphene with successive laser pulses. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:574 / 582
页数:9
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