Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 γ-ray irradiation

被引：14
作者：
Li, Y. L. [1 ,2 ]
Wang, X. J. [1 ]
He, S. M. [1 ]
Zhang, B. [1 ]
Sun, L. X. [1 ]
Li, Y. D. [3 ]
Guo, Q. [3 ]
Chen, C. Q. [2 ]
Chen, Z. H. [4 ,5 ]
Lu, W. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Optoelect Sci & Engn, Wuhan 430074, Peoples R China
[3] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
[4] Fudan Univ, Surface Phys Lab, Dept Phys, Shanghai 200433, Peoples R China
[5] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 12期
关键词：
MULTIPLE-QUANTUM WELLS; TEMPERATURE-DEPENDENCE; EXCITON LOCALIZATION; GAN; EMISSION; SHIFT; SEMICONDUCTORS; EPILAYERS; DEVICES; DAMAGE;
D O I：
10.1063/1.4770465
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The redshift (similar to 54 meV) of the photoluminescence (PL) peak energy of blue InGaN/GaN light-emitting diodes exposed to Co-60 gamma-rays was observed. Time-resolved PL indicates that the PL radiative time increases along with irradiation does. The temperature-dependent PL and photoreflectance techniques show that gamma-ray irradiance leads to higher carrier localization energies and larger Stokes' shift, respectively. These facts suggest that the redshifts of the PL peak emission introduced by gamma-ray irradiance mainly originated from the enhancement of indium fluctuation. The cathodoluminescent images of the samples before and after gamma-ray irradiation are compared to verify the results. (c) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770465]
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页数：5
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