Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy

被引：26
作者：
Bosco, Jeffrey P. [1 ]
Kimball, Gregory M. [1 ]
Lewis, Nathan S. [1 ]
Atwater, Harry A. [1 ]
机构：
[1] CALTECH, Watson Lab & Noyes Lab, Pasadena, CA 91125 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 363卷
关键词：
Pseudomorphic growth; X-ray diffraction; Molecular beam epitaxy; Phosphides; Solar cells; ZN3P2; SINGLE-CRYSTALS; ZINC PHOSPHIDE; ATOMIC-HYDROGEN; ELECTRICAL-PROPERTIES; TRANSPORT-PROPERTIES; SOLAR-CELLS; THIN-FILMS; TEMPERATURE; EPILAYERS; DEPOSITION;
D O I：
10.1016/j.jcrysgro.2012.10.054
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Tetragonal zinc phosphide (alpha-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn3P2||(004) GaAs(002) and Zn3P2(202) GaAs(1 (1) under bar1). Partial relaxation of the Zn3P2 lattice was observed for films that were > 150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the films were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films ( > 40 cm(2) V-1 s(-1)) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：205 / 210
页数：6
相关论文
共 50 条
[31]   ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy [J].
Zhang, Yuanchang ;
Eyink, Kurt G. ;
Peoples, Joseph ;
Mahalingam, Krishnamurthy ;
Hill, Madelyn ;
Grazulis, Larry .
JOURNAL OF CRYSTAL GROWTH, 2016, 435 :62-67
[32]   Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate [J].
Benyahia, D. ;
Kubiszyn, L. ;
Michalczewski, K. ;
Keblowski, A. ;
Martyniuk, P. ;
Piotrowski, J. ;
Rogalski, A. .
OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (09)
[33]   Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy [J].
Zhang, Linen ;
Liu, Chao ;
Yang, Qiumin ;
Cui, Lijie ;
Zeng, Yiping .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 29 :351-356
[34]   Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy [J].
D. Benyahia ;
Ł. Kubiszyn ;
K. Michalczewski ;
A. Kębłowski ;
P. Martyniuk ;
J. Piotrowski ;
A. Rogalski .
Journal of Electronic Materials, 2018, 47 :299-304
[35]   Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy [J].
Yamazaki, Y ;
Chang, JH ;
Cho, MW ;
Sekiguchi, T ;
Yao, T .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :202-206
[36]   Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen -silsesquioxane covered GaAs (001) using molecular beam epitaxy [J].
Tran, Dat Q. ;
Pham, Huyen T. ;
Higashimine, Koichi ;
Oshima, Yoshifumi ;
Akabori, Masashi .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2018, 99 :58-62
[37]   Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001) [J].
Zhang Ma-Lin ;
Ge Jian-Feng ;
Duan Ming-Chao ;
Yao Gang ;
Liu Zhi-Long ;
Guan Dan-Dan ;
Li Yao-Yi ;
Qian Dong ;
Liu Can-Hua ;
Jia Jin-Feng .
ACTA PHYSICA SINICA, 2016, 65 (12)
[38]   Size-Dependent Optical Properties of Luminescent Zn3P2 Quantum Dots [J].
Ho, Minh Q. ;
Esteves, Richard J. Alan ;
Kedarnath, Gotluru ;
Arachchige, Indika U. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (19) :10576-10584
[39]   Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates [J].
Sorokin, Sergey V. ;
Avdienko, Pavel S. ;
Sedova, Irina V. ;
Kirilenko, Demid A. ;
Davydov, Valery Yu. ;
Komkov, Oleg S. ;
Firsov, Dmitrii D. ;
Ivanov, Sergey V. .
MATERIALS, 2020, 13 (16)
[40]   InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy [J].
Zhang Yan-Hui ;
Chen Ping-Ping ;
Li Tian-Xin ;
Yin Hao .
ACTA PHYSICA SINICA, 2010, 59 (11) :8026-8030
12345