Large magnetoresistance in tunnel junctions with an iron oxide electrode

被引：166

作者：

Seneor, P ^{[1
]}

Fert, A ^{[1
]}

Maurice, JL ^{[1
]}

Montaigne, F ^{[1
]}

Petroff, F ^{[1
]}

Vaurès, A ^{[1
]}

机构：

[1] Thomson CSF, LCR, CNRS, Unite Mixte Phys, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.123246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and properties of (cobalt/alumina/iron oxide) tunnel junctions. We observe magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature. This large MR is ascribed to the presence of a Fe3-xO4 (close to half-metallic magnetite) phase identified by electron diffraction. At low temperature, the MR drops sharply when the bias voltage is smaller than 10 mV, which suggests that the magnetoresistance originates from the activation of tunneling channels through spin polarized states below and above the Fermi level in the iron oxide. (C) 1999 American Institute of Physics. [S0003-6951(99)01026-8].

引用

页码：4017 / 4019

页数：3

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