Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress

被引：12
作者：
Lim, Young Soo [1 ]
Seo, Seul Gi [1 ,2 ]
Kim, Bo Bae [1 ,2 ]
Choi, Hyoung-Seuk [1 ]
Seo, Won-Seon [1 ]
Cho, Yong Soo [2 ]
Park, Hyung-Ho [2 ]
机构：
[1] Korea Inst Ceram Engn & Technol, Green Ceram Div, Seoul 153801, South Korea
[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
来源：
ELECTRONIC MATERIALS LETTERS | 2012年 / 8卷 / 04期
关键词：
transparent conducting oxide; ZnO; sputtering; flexible; ZINC-OXIDE FILMS; POLYETHYLENE TEREPHTHALATE; THIN-FILMS; OPTICAL-PROPERTIES; TRANSPARENT; SUBSTRATE;
D O I：
10.1007/s13391-012-2006-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the effects of an SiO2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.
引用
收藏
页码：375 / 379
页数：5
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