InP-Based Quantum Dot Lasers

被引:7
作者
Poole, Philip [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada
来源
ADVANCES IN SEMICONDUCTOR LASERS | 2012年 / 86卷
关键词
SEMICONDUCTOR OPTICAL AMPLIFIER; MU-M WAVELENGTH; ROOM-TEMPERATURE; LOW-THRESHOLD; DASH LASERS; PULSE GENERATION; EMISSION; GAIN; LINEWIDTH; GAAS;
D O I
10.1016/B978-0-12-391066-0.00011-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:419 / 453
页数:35
相关论文
共 109 条
  • [1] An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots
    Akiyama, T
    Ekawa, M
    Sugawara, M
    Kawaguchi, K
    Sudo, H
    Kuramata, A
    Ebe, H
    Arakawa, Y
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (08) : 1614 - 1616
  • [2] Separate Error-Free Transmission of Eight Channels at 10 Gb/s Using Comb Generation in a Quantum-Dash-Based Mode-Locked Laser
    Akrout, Akram
    Shen, Alexandre
    Brenot, Romain
    Van Dijk, Frederic
    Legouezigou, Odile
    Pommereau, Frederic
    Lelarge, Francois
    Ramdane, Abderrahim
    Duan, Guang-Hua
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (23) : 1746 - 1748
  • [3] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573
  • [4] Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates
    Alghoraibi, I.
    Rohel, T.
    Piron, R.
    Bertru, N.
    Paranthoen, C.
    Elias, G.
    Nakkar, A.
    Folliot, H.
    Le Corre, A.
    Loualiche, S.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (26)
  • [5] Multiple wavelength amplification in wide band high power 1550 nm quantum dash optical amplifier
    Alizon, R
    Hadass, D
    Mikhelashvili, V
    Eisenstein, G
    Schwertberger, R
    Somers, A
    Reithmaier, JP
    Forchel, A
    Calligaro, A
    Bansropun, S
    Krakowski, A
    [J]. ELECTRONICS LETTERS, 2004, 40 (12) : 760 - 761
  • [6] Tunable InAs quantum-dot lasers grown on (100) InP
    Allen, CN
    Poole, PJ
    Marshall, P
    Raymond, S
    Fafard, S
    [J]. MICROELECTRONICS JOURNAL, 2003, 34 (5-8) : 415 - 417
  • [7] InAs self-assembled quantum-dot lasers grown on (100) InP
    Allen, CN
    Poole, PJ
    Marshall, P
    Fraser, J
    Raymond, S
    Fafard, S
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (19) : 3629 - 3631
  • [8] Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy
    Anantathanasarn, S.
    Notzel, R.
    van Veldhoven, P. J.
    van Otten, F. W. M.
    Barbarin, Y.
    Servanton, G.
    de Vries, T.
    Smalbrugge, E.
    Geluk, E. J.
    Eijkemans, T. J.
    Bente, E. A. J. M.
    Oei, Y. S.
    Smit, M. K.
    Wolter, J. H.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (07)
  • [9] [Anonymous], APPL PHYS LETT
  • [10] [Anonymous], APPL PHYS LETT