Silicon Carbide Coating on Diamond Powder by Rotary Chemical Vapor Deposition

被引：11

作者：

Katsui, Hirokazu ^{[1
]}

He, Zhenhua ^{[1
]}

Goto, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS INTEGRATION | 2012年 / 508卷

关键词：

diamond; SiC; rotary chemical vapor deposition; Fourier Transform Infrared spectroscopy; spark plasma sintering; PHASE-TRANSFORMATION; DENSIFICATION;

D O I：

10.4028/www.scientific.net/KEM.508.65

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (SiC) layers were prepared on diamond powders by rotary chemical vapor deposition (RCVD) using C6H18Si2 as a precursor. Diamond particles with cleavable and sharp configurations were covered with smooth layers by RCVD. Infrared absorption bands at around 800 and 1000 cm(-1) attributed to Si-C bonding were observed in FTIR spectrum on the diamond powders. The pellet sample sintered by spark plasma sintering using the diamond powders suggested that beta-SiC was deposited on the diamond particles.

引用

页码：65 / 68

页数：4

共 17 条

[11]

MORIGUCHI H, 2004, METAL POWDER REPORT, V59, P26

[12] Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation [J].