High-Performance Field-Effect-Transistors on Monolayer WSe2

被引：46

作者：

Liu, W. ^{[1
]}

Cao, W. ^{[1
]}

Kang, J. ^{[1
]}

Banerjee, K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11 | 2013年 / 58卷 / 07期

关键词：

D O I：

10.1149/05807.0281ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effect-transistors (FETs). This paper reviews the relevant physics and properties of WSe2 and highlights the excellent scalability of monolayer WSe2 for ultra-short channel (sub-5 nm) FETs. The crucial role of metal-WSe2 contacts in determining the performance of monolayer WSe2 FETs is also emphasized using experiments guided by ab-initio density functional theory (DFT). With a suitably chosen contact, a back-gated monolayer WSe2 FET on Al2O3 substrate is shown to exhibit both high mobility and high ON-current.

引用

页码：281 / 285

页数：5

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