Origins of interdiffusion, crystallization and layer exchange in crystalline Al/amorphous Si layer systems

被引：5

作者：

He, D. ^{[1
]}

Wang, J. Y. ^{[1
]}

Mittemeijer, E. J. ^{[1
]}

机构：

[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 15期

关键词：

aluminium-induced; crystallization; layer exchange; thermodynamic analysis;

D O I：

10.1016/j.apsusc.2005.12.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Aluminium-induced crystallization of amorphous silicon (a-Si) in Al/a-Si and a-Si/Al bilayers was studied upon annealing at low temperatures between 165 and 250 degrees C, by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). Upon annealing the inward diffusion of Si along grain boundaries in Al takes place, followed by crystallization of this diffused Si. Continuous annealing leads to (more or less) layer exchange in both types of bilayers. The change in bulk energy of the Al phase (release of macrostress and microstrain, increase of grain size) promotes the occurrence of layer exchange, whereas changes in surface and interface energies counteract the layer exchange. (c) 2005 Elsevier B.V. All rights reserved.

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收藏

页码：5470 / 5473

页数：4

相关论文

共 20 条

[1] Thermodynamic model for solid-state amorphization in binary systems at interfaces and grain boundaries [J].

Benedictus, R ;

Bottger, A ;

Mittemeijer, EJ .

PHYSICAL REVIEW B, 1996, 54 (13) :9109-9125

[2]

Cheng CF, 2001, IEEE REGION 10 INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONIC TECHNOLOGY, VOLS 1 AND 2, P838, DOI 10.1109/TENCON.2001.949711

[3] Polycrystalline silicon thin films on glass substrate [J].

Dimova-Malinovska, D ;

Angelov, O ;

Sendova-Vassileva, M ;

Kamenova, M ;

Pivin, JC .

THIN SOLID FILMS, 2004, 451 :303-307

[4] AL-DOPED AND SB-DOPED POLYCRYSTALLINE SILICON OBTAINED BY MEANS OF METAL-INDUCED CRYSTALLIZATION [J].

GONG, SF ;

HENTZELL, HTG ;

ROBERTSSON, AE ;

HULTMAN, L ;

HORNSTROM, SE ;

RADNOCZI, G .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3726-3732

[5] The initial stage of the reaction between amorphous silicon and crystalline aluminum [J].

He, D ;

Wang, JY ;

Mittemeijer, EJ .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[6] Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: microstructural and thermodynamic analysis of layer exchange [J].

He, D ;

Wang, JY ;

Mittemeijer, EJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (03) :501-509

[7] LOW TEMPERATURE REACTIONS AT SI/METAL INTERFACES; WHAT IS GOING ON AT THE INTERFACES? [J].

Hiraki, Akio .

SURFACE SCIENCE REPORTS, 1983, 3 (07) :357-412

[8] CRYSTALLIZATION OF AMORPHOUS-SILICON DURING THIN-FILM GOLD REACTION [J].

HULTMAN, L ;

ROBERTSSON, A ;

HENTZELL, HTG ;

ENGSTROM, I ;

PSARAS, PA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3647-3655

[9] Thermodynamic stability of amorphous oxide films on metals: Application to aluminum oxide films on aluminum substrates [J].

Jeurgens, LPH ;

Sloof, WG ;

Tichelaar, FD ;

Mittemeijer, EJ .

PHYSICAL REVIEW B, 2000, 62 (07) :4707-4719

[10] In situ analysis of aluminum enhanced crystallization of hydrogenated amorphous silicon (a-Si:H) using X-ray diffraction [J].

Khalifa, FA ;

Naseem, HA ;

Shultz, JL ;

Brown, WD .

THIN SOLID FILMS, 1999, 355 :343-346