Generation and Propagation of Single Event Transients in 0.18-μm Fully Depleted SOI

被引：33

作者：

Gouker, Pascale ^{[1
]}

Brandt, Jim ^{[1
]}

Wyatt, Peter ^{[1
]}

Tyrrell, Brian ^{[1
]}

Soares, Anthony ^{[1
]}

Knecht, Jeffrey ^{[1
]}

Keast, Craig ^{[1
]}

McMorrow, Dale ^{[2
]}

Narasimham, BalaJi ^{[3
]}

Gadlage, Matthew ^{[3
]}

Bhuva, Bharat ^{[3
]}

机构：

[1] MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Vanderbilt Univ, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

Floating body; fully depleted silicon-on-insulator; heavy ions; laser irradiation; single-event transients;

D O I：

10.1109/TNS.2008.2007953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mu m FDSOI CMOS process using laser-probing techniques. We show that the transient pulse widens as it propagates; the widening is largely eliminated by the body contact. Good agreement is observed between pulsed-laser and heavy ion testing.

引用

页码：2854 / 2860

页数：7

共 16 条

[1]

BAUMANN R, 2005, 2005 IEEE NSREC SHOR

[2] Comparison of error rates in combinational and sequential logic [J].

Buchner, S ;

Baze, M ;

Brown, D ;

McMorrow, D ;

Melinger, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) :2209-2216

[3] Single event transient pulsewidth measurements using a variable temporal latch technique [J].

Eaton, P ;

Benedetto, J ;

Mavis, D ;

Avery, K ;

Sibley, M ;

Gadlage, M ;

Turflinger, T .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3365-3368

[4]

Faynot O, 2002, 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P35, DOI 10.1109/SOI.2002.1044405

[5] New insights into single event transient propagation in chains of inverters - Evidence for propagation-induced pulse broadening [J].

Ferlet-Cavrois, V. ;

Paillet, P. ;

McMorrow, D. ;

Fel, N. ;

Baggio, J. ;

Girard, S. ;

Duhamel, O. ;

Melinger, J. S. ;

Gaillardin, M. ;

Schwank, J. R. ;

Dodd, P. E. ;

Shaneyfelt, M. R. ;

Felix, J. A. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2338-2346

[6] Analysis of the transient response of high performance 50-nm partially depleted SOI transistors using a laser probing technique [J].

Ferlet-Cavrois, V. ;

Paillet, R. ;

McMorrow, D. ;

Melinger, J. S. ;

Campbell, A. B. ;

Gaillardin, M. ;

Faynot, O. ;

Thomas, O. ;

Barna, G. ;

Giffard, B. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (04) :1825-1833

[7] Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices [J].

Ferlet-Cavrois, V ;

Paillet, P ;

McMorrow, D ;

Torres, A ;

Gaillardin, M ;

Melinger, JS ;

Knudson, AR ;

Campbell, AB ;

Schwank, JR ;

Vizkelethy, G ;

Shaneyfelt, MR ;

Hirose, K ;

Faynot, O ;

Jahan, C ;

Tosti, L .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2104-2113

[8] Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits [J].

Gadlage, Matthew J. ;

Schrimpf, Ronald D. ;

Narasimham, Balaji ;

Bhuva, Bharat L. ;

Eaton, Paul H. ;

Benedetto, Joseph M. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2495-2499

[9] SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design [J].

Hirose, K ;

Saito, H ;

Kuroda, Y ;

Ishii, S ;

Fukuoka, Y ;

Takahashi, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) :2965-2968

[10] Characteristics of SOI FET's under pulsed conditions [J].

Jenkins, KA ;

Sun, JYC ;

Gautier, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (11) :1923-1930

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