Spontaneous growth of InxGa1-xN nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy

被引：4

作者：

De, Arpan ^{[1
]}

Nagaraja, K. K. ^{[1
]}

Tangi, Malleswararao ^{[1
]}

Shivaprasad, S. M. ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India

来源：

MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 03期

关键词：

InxGa1-xN; MBE; nanorods; HRXRD; FESEM;

D O I：

10.1088/2053-1591/1/3/035019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effect of growth temperature on the morphology, structural and optical properties of InxGa1-xN layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. By varying the substrate temperature we are able to obtain tapered as well as flat-top nanorod and interconnected random network morphology. An increase of indium incorporation, determined by HRXRD, from 1% to 23% with decrease in growth temperature has been obtained. Room temperature photoluminescence (PL) and absorption measurements on the grown samples follow Vegard's law. A band bowing parameter of 1.54 eV has been determined for the observed composition range. A good quality InxGa1-xN film having no phase separation with significant PL emission intensity is obtained at a growth temperature much lower than that conventionally used in MBE for InxGa1-xN growth on sapphire.

引用

页数：10

共 47 条

[1] Growth and applications of Group III nitrides
Ambacher, O
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) : 2653 - 2710
[2] Characterization of InGaN-based nanorod light emitting diodes with different indium compositions
Bai, J.
Wang, Q.
Wang, T.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)
[3] Spontaneously grown GaN and AlGaN nanowires
Bertness, KA
Roshko, A
Sanford, NA
Barker, JM
Davydov, A
[J]. JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 522 - 527
[4] Phase stability, chemical bonds, and gap bowing of InxGa1-xN alloys:: Comparison between cubic and wurtzite structures
Caetano, C.
Teles, L. K.
Marques, M.
Dal Pino, A., Jr.
Ferreira, L. G.
[J]. PHYSICAL REVIEW B, 2006, 74 (04)
[5] On the lattice parameters of GaN
Darakchieva, V.
Monemar, B.
Usui, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (03)
[6] Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
Debnath, R. K.
Meijers, R.
Richter, T.
Stoica, T.
Calarco, R.
Lueth, H.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (12)
[7] Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
Doppalapudi, D
Basu, SN
Ludwig, KF
Moustakas, TD
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1389 - 1395
[8] Solid phase immiscibility in GaInN
Ho, IH
Stringfellow, GB
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2701 - 2703
[9] Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays
Hong, Chi-Chang
Ahn, Hyeyoung
Wu, Chen-Ying
Gwo, Shangjr
[J]. OPTICS EXPRESS, 2009, 17 (20): : 17227 - 17233
[10] Hori M, 2002, PHYS STATUS SOLIDI B, V234, P750, DOI 10.1002/1521-3951(200212)234:3<750::AID-PSSB750>3.0.CO

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