Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell

被引：19

作者：

Bae, Dowon ^{[1
]}

Gho, Junghwan ^{[1
]}

Shin, Minjung ^{[1
]}

Kwon, Sehan ^{[1
]}

机构：

[1] LG Innotek, Solar Cell Business Div, Osan, Gyeonggi Do, South Korea

来源：

THIN SOLID FILMS | 2013年 / 535卷

关键词：

Cadmium sulfide; CdZnS; Chemical bath deposition; CIGS; Buffer layer; CHEMICAL BATH DEPOSITION; THIN-FILM; GROWTH;

D O I：

10.1016/j.tsf.2012.11.077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cd(1-x)ZnxS (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se-2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS: Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：162 / 165

页数：4

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