Annealing influence over structural and optical properties of sprayed SnS thin films

被引：63

作者：

Patel, Malkeshkumar ^{[1
]}

Mukhopadhyay, Indrajit ^{[1
]}

Ray, Abhijit ^{[1
]}

机构：

[1] Pandit Deendayal Petr Univ, Sch Solar Energy, Gandhinagar 382007, Gujarat, India

来源：

OPTICAL MATERIALS | 2013年 / 35卷 / 09期

关键词：

SnS; Thin films; Spray pyrolysis; Optical constants; Post-annealing; CHEMICAL-DEPOSITION; LAYERS; FABRICATION; BEHAVIOR;

D O I：

10.1016/j.optmat.2013.04.034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A systematic investigation of the effect of annealing temperature on the structural and opto-electrical properties of spray deposited SnS thin films has been presented. As received SnCl2 center dot 2H(2)O and thiourea were used for Sn2+ and S2- ion sources, respectively in the solution without any complexing agent. Following the deposition, films were annealed in a tubular quartz furnace at different temperature in the range of 300-500 degrees C for 30 min and cooled down to room temperature under flowing Argon atmosphere. The surface morphology and crystallite size were modified by the annealing temperature. Structural characterization revealed nano-crystalline nature of the deposited film. The XRD spectra showed deposited films were orthorhombic-SnS with preferential (111) orientation and better phase purity, which was further improved by increasing annealing temperature to 500 degrees C. The effect of annealing temperature on the optical and electrical properties of SnS films was also investigated using UV-vis spectroscopy, Photo-electrochemical response and Hall Effect. The increase of annealing temperature up to 500 degrees C induced a substantial increase in the absorption coefficient and electrical conductivity. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1693 / 1699

页数：7

共 58 条

[1] Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells [J].

Avellaneda, David ;

Delgado, Guadalupe ;

Nair, M. T. S. ;

Nair, P. K. .

THIN SOLID FILMS, 2007, 515 (15) :5771-5776

[2] Tin sulfide thin films and Mo/p-SnS/n-CdS/ZnO heterojunctions for photovoltaic applications [J].

Bashkirov, S. A. ;

Gremenok, V. F. ;

Ivanov, V. A. ;

Lazenka, V. V. ;

Bente, K. .

THIN SOLID FILMS, 2012, 520 (17) :5807-5810

[3] A method for deducing accurate values of the lattice spacing from X- ray powder photographs taken by the Debye-Scherrer method [J].

Bradley, AJ ;

Jay, AH .

PROCEEDINGS OF THE PHYSICAL SOCIETY, 1932, 44 :563-579

[4] Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis [J].

Calixto-Rodriguez, M. ;

Martinez, H. ;

Sanchez-Juarez, A. ;

Campos-Alvarez, J. ;

Tiburcio-Silver, A. ;

Calixto, M. E. .

THIN SOLID FILMS, 2009, 517 (07) :2497-2499

[5] The structure and properties of SnS thin films prepared by pulse electro-deposition [J].

Cheng, Shuying ;

Chen, Yanqing ;

He, Yingjie ;

Chen, Guonan .

MATERIALS LETTERS, 2007, 61 (06) :1408-1412

[6] Characterization of SnS films prepared by constant-current electro-deposition [J].

Cheng, SY ;

Chen, YQ ;

Huang, CC ;

Chen, GN .

THIN SOLID FILMS, 2006, 500 (1-2) :96-100

[7] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[8] Influence of annealing on physical properties of evaporated SnS films [J].

Devika, M. ;

Reddy, N. Koteeswara ;

Ramesh, K. ;

Gunasekhar, K. R. ;

Gopal, E. S. R. ;

Reddy, K. T. Ramakrishna .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) :1125-1131

[9] Temperature dependent structural properties of nanocrystalline SnS structures [J].

Devika, M. ;

Reddy, N. Koteeswara ;

Patolsky, Fernando ;

Ramesh, K. ;

Gunasekhar, K. R. .

APPLIED PHYSICS LETTERS, 2009, 95 (26)

[10] Intergranular and interphase microstresses [J].

Dye, D ;

Stone, HJ ;

Reed, RC .

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2001, 5 (01) :31-37

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