Ultrathin magnetic oxide EuO films on Si(001) using SiOx passivation-Controlled by hard x-ray photoemission spectroscopy

被引：24

作者：

Caspers, C. ^{[1
]}

Flade, S. ^{[1
]}

Gorgoi, M. ^{[2
]}

Gloskovskii, A. ^{[3
]}

Drube, W. ^{[3
]}

Schneider, C. M. ^{[1
,4
,5
]}

Mueller, M. ^{[1
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany

[2] Helmholtz Zentrum Berlin Mat & Energie, BESSY 2, D-12489 Berlin, Germany

[3] DESY, DESY Photon Sci, D-22603 Hamburg, Germany

[4] Fak Phys, D-47048 Duisburg, Germany

[5] Ctr Nanointegrat Duisburg Essen CeNIDE, D-47048 Duisburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 17期

关键词：

SPIN; TRANSPORT;

D O I：

10.1063/1.4795010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the chemical and structural optimization of ultrathin magnetic oxide EuO films on silicon. By applying a controlled in situ passivation of the Si(001) surface with SiOx in the monolayer regime, metallic silicide contaminations at the interface can be effectively reduced down to a sub-monolayer coverage, as was carefully quantified by interface-sensitive hard x-ray photoemission spectroscopy. Heteroepitaxial growth of EuO on Si(001) is sustained for this ultrathin SiOx-passivation, and bulk-near magnetic properties are observed for the 4 nm-thin EuO films. Our successful combination of chemically and structurally optimized EuO/Si(001) heterostructures by ultrathin in situ SiOx passivation makes this system promising for an application as alternative spin functional tunnel contacts in spin-FETs. (C) 2013 American Institute of Physics.

引用

页数：3

共 25 条

[1] Spintronics [J].

Bader, S. D. ;

Parkin, S. S. P. .

ANNUAL REVIEW OF CONDENSED MATTER PHYSICS, VOL 1, 2010, 1 :71-88

[2] Electronic structure of EuO spin filter tunnel contacts directly on silicon [J].

Caspers, C. ;

Mueller, M. ;

Gray, A. X. ;

Kaiser, A. M. ;

Gloskovskii, A. ;

Fadley, C. S. ;

Drube, W. ;

Schneider, C. M. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (12) :441-443

[3] Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy [J].

Caspers, C. ;

Mueller, M. ;

Gray, A. X. ;

Kaiser, A. M. ;

Gloskovskii, A. ;

Fadley, C. S. ;

Drube, W. ;

Schneider, C. M. .

PHYSICAL REVIEW B, 2011, 84 (20)

[4] ORIGIN OF THE HIGH-BINDING-ENERGY STRUCTURE IN THE 3D CORE-LEVEL SPECTRA OF DIVALENT EU COMPOUNDS [J].

CHO, EJ ;

OH, SJ ;

IMADA, S ;

SUGA, S ;

SUZUKI, T ;

KASUYA, T .

PHYSICAL REVIEW B, 1995, 51 (15) :10146-10149

[5] Surface valence transition in trivalent Eu insulating compounds observed by photoelectron spectroscopy [J].

Cho, EJ ;

Oh, SJ .

PHYSICAL REVIEW B, 1999, 59 (24) :R15613-R15616

[6] Final state contribution to the Si 2p binding energy shift in SiO2/Si(100) [J].

Eickhoff, T ;

Medicherla, V ;

Drube, W .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2004, 137 :85-88

[7] Magnetometry of buried layers-Linear magnetic dichroism and spin detection in angular resolved hard X-ray photoelectron spectroscopy [J].

Gloskovskii, Andrei ;

Stryganyuk, Gregory ;

Fecher, Gerhard H. ;

Felser, Claudia ;

Thiess, Sebastian ;

Schulz-Ritter, Heiko ;

Drube, Wolfgang ;

Berner, Goetz ;

Sing, Michael ;

Claessen, Ralph ;

Yamamoto, Masafumi .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2012, 185 (1-2) :47-52

[8] The high kinetic energy photoelectron spectroscopy facility at BESSY progress and first results [J].

Gorgoi, M. ;

Svensson, S. ;

Schaefers, F. ;

Ohrwall, G. ;

Mertin, M. ;

Bressler, P. ;

Karis, O. ;

Siegbahn, H. ;

Sandell, A. ;

Rensmo, H. ;

Doherty, W. ;

Jung, C. ;

Braun, W. ;

Eberhardt, W. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 601 (1-2) :48-53

[9] Valence charges for ultrathin SiO2 films formed on Si(100) [J].

Hirose, K ;

Kihara, M ;

Okamoto, H ;

Nohira, H ;

Ikenaga, E ;

Takata, Y ;

Kobayashi, K ;

Hattori, T .

JOURNAL DE PHYSIQUE IV, 2006, 132 :83-86

[10] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

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