Design of V-Band CMOS Low-Noise Amplifier and Mixer with Integrated Transformers

被引：0

作者：

Chen, Hong-Shen ^{[1
]}

Huang, Wen-Chieh ^{[1
]}

Liu, Jenny Yi-Chun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, 101,Sect 2,Kuang Fu Rd, Hsinchu 30013, Taiwan

来源：

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年

关键词：

CMOS; low-noise amplifiers; mixers; transformers; V-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A V-band low-noise amplifier (LNA) and mixer with integrated transformers are proposed and demonstrated in a 90-nm CMOS technology. The transformer configurations are analyzed and designed with the orientations that optimize the transimpedance in the LNA design, and enhance the voltage or current gain in the mixer. In high-gain and low-power modes respectively, the designed LNA shows gains of 24.4 and 20.6 dB among wide 3-dB bandwidths of 11 GHz with lowest noise figures (NF) of 6.4 and 6.2 dB. In the low-power mode, the LNA consumes only 11.5 mW, on the low side compared to the state-of-the-arts. The designed mixer shows a conversion gain of 3.2 dB and P1dB of -1 dBm.

引用

页码：762 / 764

页数：3