Potential of CdSiP2 for Enabling Mid-Infrared Laser Sources

被引：5

作者：

Hopkins, F. Kenneth ^{[1
]}

Guha, Shekhar ^{[1
]}

Claflin, Bruce ^{[1
]}

Schunemann, Peter G. ^{[2
]}

Zawilski, Kevin T. ^{[2
]}

Giles, Nancy C. ^{[3
]}

Halliburton, Larry E. ^{[4
]}

机构：

[1] Air Force Res Lab, Wright Patterson AFB, OH 45433 USA

[2] BAE Syst Inc, Nashua, NH 03061 USA

[3] Air Force Inst Technol, Wright Patterson AFB, OH 45433 USA

[4] W Virginia Univ, Morgantown, WV 26506 USA

来源：

NANOPHOTONICS AND MACROPHOTONICS FOR SPACE ENVIRONMENTS IX | 2015年 / 9616卷

关键词：

nonlinear optics; mid-infrared laser; chalcopyrite semiconductor; CdSiP2; OPTICAL PARAMETRIC OSCILLATOR; SINGLE-CRYSTALS; GROWTH; ZNGEP2; RANGE;

D O I：

10.1117/12.2196772

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Laser sources operating near a wavelength of four microns are important for a broad range of space and airborne applications. Efficient solid-state laser sources, demonstrating the highest output power, are based upon nonlinear optical (NLO) conversion using the NLO crystal ZnGeP2. However, a related NLO crystal, CdSiP2, is now under investigation by several groups around the world. A comparison of its figure of merit for high-power handling with other NLO candidates indicates its potential for higher performance. In addition, the crystal's characteristics as well as efforts to understand the crystal's defects that presently limit NLO performance are briefly discussed.

引用

页数：7

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