Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate

被引：9

作者：

Chakrabarti, B. ^{[1
,2
]}

Vogel, E. M. ^{[2
]}

机构：

[1] Univ Texas Dallas, Richardson, TX 75080 USA

[2] Georgia Inst Technol, Atlanta, GA 30318 USA

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

关键词：

Resistive switching; Forming-free operation; Multi-level switching; RRAM;

D O I：

10.1016/j.mee.2013.03.092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we investigate the effects of the Hf:Ti ratio and annealing temperature on the properties of forming-free resistive memories with atomic layer deposited (ALD) HfTiOx nano-laminate. Devices with 25% Ti doping (Hf:Ti = 3:1) in the dielectric show reliable forming-free switching while 50% Ti doped samples (Hf:Ti = 1:1) remain conducting at all applied voltages. No significant effect of annealing was observed on the switching characteristics of the devices. The forming-free devices show capability to operate without any external or on-chip transistor and exhibit multi-level capability with four distinct levels and stable retention for all the levels. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：193 / 196

页数：4

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