Time-resolved charge detection with cross-correlation techniques

被引：16

作者：

Kueng, B. ^{[1
]}

Pfaeffli, O. ^{[1
]}

Gustavsson, S. ^{[1
]}

Ihn, T. ^{[1
]}

Ensslin, K. ^{[1
]}

Reinwald, M. ^{[2
]}

Wegscheider, W. ^{[2
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 03期

关键词：

electric sensing devices; gallium arsenide; III-V semiconductors; quantum point contacts; semiconductor quantum dots; single electron devices; time resolved spectra; NOISE; ELECTRONS;

D O I：

10.1103/PhysRevB.79.035314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present time-resolved charge-sensing measurements on a GaAs double quantum dot with two proximal quantum point-contact (QPC) detectors. The QPC currents are analyzed with cross-correlation techniques, which enable us to measure dot charging and discharging rates for significantly smaller signal-to-noise ratios than required for charge detection with a single QPC. This allows us to reduce the current level in the detector and therefore the invasiveness of the detection process and may help to increase the available measurement bandwidth in noise-limited setups.

引用

页数：5

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