Resonance enhancement of x-rays and fluorescence yield from marker layers in thin films

被引:27
作者
Ghose, SK
Dev, BN
Gupta, A
机构
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
[2] DAEF, Interuniv Consortium, Indore 452001, Madhya Pradesh, India
关键词
D O I
10.1103/PhysRevB.64.233403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resonance enhancement of x rays in a thin film and fluorescence emission from embedded marker layers within the film have been studied. With embedded marker layers of Ti, Fe, and W at different depths in a thin Si film on a Au-coated Si substrate, it has been shown that the position of a marker layer throughout the depth of the film can be unambiguously determined with a precision better than 0.5 run. In this example, field-intensity enhancement upto 16 times have been observed. Field enhancement gives rise to enhanced sensitivity. The usefulness of this resonance-enhanced x-ray fluorescence spectrometry in the study of diffusion with marker layers in thin films including polymers and nanocomposites has been elucidated.
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页数:4
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