Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

被引：11
作者：
Sundaresan, Siddarth G. [1 ]
Soe, Aye-Mya [1 ]
Jeliazkov, Stoyan [1 ]
Singh, Ranbir [1 ]
机构：
[1] GeneSiC Semicond Inc, Dulles, VA 20102 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 10期
关键词：
Avalanche breakdown; bipolar junction transistor (BJT); electrical properties; long-term reliability; silicon carbide (SiC) devices; JUNCTION TRANSISTORS; 1200; V; POWER; TEMPERATURE; DEGRADATION;
D O I：
10.1109/TED.2012.2210048
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The stability of the electrical characteristics of SiC n-p-n bipolar junction transistors (BJTs) is investigated under long-term avalanche-mode, dc, and pulsed-current operation. There is absolutely no change in the blocking I-V characteristics after a 934-h repetitive avalanche stress test. Long-term operation of the base-emitter diode (open-collector mode) alone does not result in any degradation of the ON-state voltage drop V-F or current gain beta. Long-term operation in common-emitter mode results in negligible V-F or beta degradation, if the base plate is maintained at 25 degrees C. A greater degradation of beta results upon increasing the base-plate temperature. The same total electrical charge, if passed through the BJT as a pulsed current, instead of a dc current, results in smaller beta reduction. It is also shown that the beta degradation can be reversed by annealing at >= 200 degrees C, suggesting the possibility of degradation-free operation of SiC BJTs, when operating in pulsed current mode at >= 200 degrees C temperatures.
引用
收藏
页码：2795 / 2802
页数：8
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