On the dislocation mechanism of amorphization of Si by indentation

被引：22

作者：

Tachi, M ^{[1
]}

Suprijadi

Arai, S

Saka, H

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Ctr Integrated Res Sci & Technol, Nagoya, Aichi 4648603, Japan

[4] Inst Technol Bandung, Dept Phys, Bandung 40132, Indonesia

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2002年 / 82卷 / 03期

关键词：

D O I：

10.1080/09500830110109544

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of in amorphous phase underneath a Vickers indentation produced on a Si(001) surface at room temperature has been observed by cross-sectional transmission electron microscopy. Two types of location are observed for the amorphous phase. One is formed just underneath the image of the indentation and the other is parallel to the slip planes of Si. It is concluded that the latter type, at least, is formed as a result of activation of dislocations. which is induced by an external shear stress combined with a hydrostatic pressure.

引用

页码：133 / 139

页数：7

共 14 条

[1] THE EXTENT OF PHASE-TRANSFORMATION IN SILICON HARDNESS INDENTATIONS [J].

CALLAHAN, DL ;

MORRIS, JC .

JOURNAL OF MATERIALS RESEARCH, 1992, 7 (07) :1614-1617

[2] THE PLASTIC-DEFORMATION OF SILICON BETWEEN 300-DEGREES-C AND 600-DEGREES-C [J].

CASTAING, J ;

VEYSSIERE, P ;

KUBIN, LP ;

RABIER, J .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06) :1407-1413

[3] AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].

CLARKE, DR ;

KROLL, MC ;

KIRCHNER, PD ;

COOK, RF ;

HOCKEY, BJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159

[4] DEFORMATION OF SILICON AT LOW-TEMPERATURES [J].

HILL, MJ ;

ROWCLIFFE, DJ .

JOURNAL OF MATERIALS SCIENCE, 1974, 9 (10) :1569-1576

[5] ATOMICALLY SHARP CRACKS IN BRITTLE SOLIDS - AN ELECTRON-MICROSCOPY STUDY [J].

LAWN, BR ;

HOCKEY, BJ ;

WIEDERHORN, SM .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (05) :1207-1223

[6] Size-dependent phase transformations during point loading of silicon [J].

Mann, AB ;

van Heerden, D ;

Pethica, JB ;

Weihs, TP .

JOURNAL OF MATERIALS RESEARCH, 2000, 15 (08) :1754-1758

[7] STRESS-INDUCED AMORPHIZATION OF A SILICON CRYSTAL BY MECHANICAL SCRATCHING [J].

MINOWA, K ;

SUMINO, K .

PHYSICAL REVIEW LETTERS, 1992, 69 (02) :320-322

[8] THE DEFORMATION-BEHAVIOR OF CERAMIC CRYSTALS SUBJECTED TO VERY LOW LOAD (NANO)INDENTATIONS [J].

PAGE, TF ;

OLIVER, WC ;

MCHARGUE, CJ .

JOURNAL OF MATERIALS RESEARCH, 1992, 7 (02) :450-473

[9] PLAN-VIEW TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF A CRACK-TIP IN SILICON [J].

SAKA, H ;

NAGAYA, G .

PHILOSOPHICAL MAGAZINE LETTERS, 1995, 72 (04) :251-255

[10] FIB/HVEM observation of the configuration of cracks and the defect structure near the cracks in Si [J].

Saka, H ;

Abe, S .

JOURNAL OF ELECTRON MICROSCOPY, 1997, 46 (01) :45-57

← 1 2 →