High-Performance Thermoelectric Bulk Colusite by Process Controlled Structural Disordering

被引：102

作者：

Bourges, Cedric ^{[1
]}

Bouyrie, Yohan ^{[2
]}

Supka, Andrew R. ^{[8
,9
]}

Al Orabi, Rabih Al Rahal ^{[8
,9
,10
]}

Lemoin, Pierric ^{[3
]}

Lebedev, Oleg I. ^{[1
]}

Ohta, Michihiro ^{[2
]}

Suekuni, Koichiro ^{[4
]}

Nassif, Vivian ^{[5
]}

Hardy, Vincent ^{[1
,6
]}

Daou, Ramzy ^{[1
]}

Miyazaki, Yuzuru ^{[7
]}

Fornari, Marco ^{[8
,9
]}

Guilmeau, Emmanuel ^{[1
]}

机构：

[1] ENSICAEN, CNRS, Lab CRISMAT, UMR 6508, 6 Blvd Marechal Juin, F-14050 Caen 04, France

[2] Natl Inst Adv Ind Sci & Technol, Res Inst Energy Conservat, Tsukuba, Ibaraki 3058568, Japan

[3] Univ Rennes, CNRS, ISCR, UMR 6226, F-35000 Rennes, France

[4] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[5] Univ Grenoble Alpes, F-38000 Grenoble, France

[6] CNRS, Inst NEEL, F-38042 Grenoble, France

[7] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

[8] Cent Michigan Univ, Dept Phys, Mt Pleasant, MI 48859 USA

[9] Cent Michigan Univ, Sci Adv Mat Program, Mt Pleasant, MI 48859 USA

[10] AXELONE Collaborat Platform Innovat Mat, Solvay Design & Dev Funct Mat Dept, 87 Rue Freres Perret BP62, F-69192 St Fons, France

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2018年 / 140卷 / 06期

关键词：

LOW THERMAL-CONDUCTIVITY; COPPER; FIGURE; TETRAHEDRITES; GENERATION; TERNARY; POWER;

D O I：

10.1021/jacs.7b11224

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-performance thermoelectric bulk sulfide with the colusite structure is achieved by controlling the densification process and forming short-to-medium range structural defects. A simple and powerful way to adjust. carrier concentration combined with enhanced phonon scattering through point defects and, disordered regions is described. By combining experiments with band structure and phonons calculations, we elucidate, for the first time, the underlying Mechanism at the origin, of intrinsically low thermal conductivity in colusite samples as well as the effect of S vacancies and antisite defects on the carrier concentration. Our approach provides a controlled and scalable method to engineer high power factors and remarkable figures of merit near the unity in complex bulk sulfide such. as Cu26V2Sn6S32 colusites.

引用

页码：2186 / 2195

页数：10

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