Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

被引：20

作者：

Abderrahmane, Abdelkader ^{[1
]}

Koide, Shota ^{[1
]}

Sato, Shin-Ichiro ^{[2
]}

Ohshima, Takeshi ^{[2
]}

Sandhu, Adarsh ^{[1
,3
]}

Okada, Hiroshi ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan

[2] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan

[3] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2012年 / 48卷 / 11期

关键词：

Compound semiconductor; Hall effect devices; ion radiation effects; robust stability; ELECTRON-MOBILITY TRANSISTORS; PROBE MICROSCOPY; ALGAN/GAN;

D O I：

10.1109/TMAG.2012.2196986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the fabrication and magnetoelectric properties of robust, high sensitivity Hall effect sensors fabricated using AlGaN/GaN and AlInSb/InAsSb/AlInSb heterostructures with a two-dimensional electron gas at the heterointerface. The sensitivity of AlInSb/InAsSb/AlInSb heterostructure clearly degrades above similar to 150 degrees C. The AlGaN/GaN 2DEG Hall sensors were stable up to at least 400 degrees C and even after irradiation of 380 keV protons with a fluence of 1 x 10(14) cm(-2), where AlInSb/InAsSb/AlInSb heterostructure showed an increase in the sheet carrier density. The feasibility of applications of the AlGaN/GaN and AlInSb/InAsSb/AlInSb Hall sensor for harsh radiation environment is discussed.

引用

页码：4421 / 4423

页数：3

共 8 条

[1] Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °C [J].