Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

被引：3
|
作者：
Lee, CS [1 ]
Hsu, WC [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2001年 / 30卷 / 03期
关键词：
pseudomorphic doped channel field-effect transistor; velocity overshoot; analytic modelling;
D O I：
10.1006/spmi.2001.1005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAS/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In0.15Ga0.85As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated. (C) 2001 Academic Press.
引用
收藏
页码：145 / 158
页数：14
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