Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

被引：3

作者：

Lee, CS ^{[1
]}

Hsu, WC ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2001年 / 30卷 / 03期

关键词：

pseudomorphic doped channel field-effect transistor; velocity overshoot; analytic modelling;

D O I：

10.1006/spmi.2001.1005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAS/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In0.15Ga0.85As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated. (C) 2001 Academic Press.

引用

页码：145 / 158

页数：14

共 21 条

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