Thermal conductivity of diamond composites sintered under high pressures

被引：148

作者：

Ekimov, E. A. ^{[1
]}

Suetin, N. V. ^{[2
]}

Popovich, A. F. ^{[3
]}

Ralchenko, V. G. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst High Pressure Phys, Troitsk 142190, Moscow Region, Russia

[2] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 117234, Russia

[3] RAS, Inst Gen Phys, Troitsk 142190, Moscow Region, Russia

来源：

关键词：

composites; thermal properties; synthetic diamond; high pressure-high temperature;

D O I：

10.1016/j.diamond.2007.12.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal conductivity at room temperature of diamond composites of two types: with a diamond skeleton and with diamond grains imbedded in a non-diamond matrix was evaluated in dependence of the diamond grain size (a) varied from a ten of microns to 500 mu m. The thermal conductivity of the compacts with diamond skeleton obtained in the Cu-diamond system at high pressure of 8 GPa strongly increases with diamond particles size approaching the maximum value of 9 W/cm K at d approximate to 200 mu m. The compacts sintered in the Cu-Ti-diamond, AI-Si-diamond and Si-diamond systems at lower pressure (2 GPa) are formed predominantly owing to the presence of the binder. It was found for these conditions that the thermal conductivity is less sensitive to the diamond grain size, reaching the value of 6 W/cm K for the composites with SiC-Si matrix. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：838 / 843

页数：6

共 21 条

[1] Interface formation in infiltrated Al(Si)/diamond composites [J].

Beffort, O. ;

Khalid, F. A. ;

Weber, L. ;

Ruch, P. ;

Klotz, U. E. ;

Meier, S. ;

Kleiner, S. .

[2]

BURGEMEISTER EA, 1980, IND DIAMOND REV, P87

[3]

EKSTROM T, 2005, Patent No. 6914025

[4]

GIGLE PD, 1979, P 6 AIRAPT INT HIGH, P914

[5]

Grimvall G., 1986, THERMOPHYSICAL PROPE, P40

[6] Solids with cracks and non-spherical pores: proper parameters of defect density and effective elastic properties [J].

Kachanov, M .

INTERNATIONAL JOURNAL OF FRACTURE, 1999, 97 (1-4) :1-32

[7]

KLACHKO LI, 1975, DIAM SUPERHARD MAT, V1, P14

[8]

KVASKOV VB, 1990, DIAMOND ELECT ENERGO, P153

[9]

NISHIBAYASHI Y, 2001, Patent No. 6270848

[10]

Novikov N. V, 1987, HDB PHYS PROPERTIES

← 1 2 3 →