Unexpected magnetic properties in carbon-doped SnO2 from first-principles calculation

被引:27
作者
Xiao, Wen-Zhi [1 ]
Wang, Ling-Ling [2 ,3 ]
Tan, Zhiyun [2 ]
机构
[1] Hunan Inst Engn, Dept Math & Phys, Xiangtan 411104, Peoples R China
[2] Hunan Univ, Sch Phys & Microelect, Changsha 410082, Hunan, Peoples R China
[3] Hunan Univ, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
Dilute magnetic semiconductor; Carbon-doped SnO2; Magnetic property; Electronic structure; TOTAL-ENERGY CALCULATIONS; PSEUDOPOTENTIALS;
D O I
10.1016/j.commatsci.2013.10.042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We employ spin-polarized density functional theory (DFT) calculations within generalized gradient approximation (GGA) to study the electronic structure and magnetic properties of C-doped SnO2 (SnO2:C) bulk and thin films. Our results indicate that a singly substitutional C (C-O) does not induce magnetism, while the C-O-C-O pairs can unexpectedly activates short-range ferromagnetism in SnO2 bulk. The intrinsic defect O vacancy (V-O) triggers local moment on the isolated C-O atom but do not enhance the ferromagnetic (FM) coupling between C-O atoms. When the substitutional C-O atoms located at the surface of SnO2 thin films, system exhibits anti-ferromagnetic (AFM) feature, which is inconsistent with experimental observation. This diversity of magnetic behavior in SnO2:C system highlights the delicate interplay between electron correlations and localization. The magnetic properties are closely related to the intrinsic defect V-O and the reduction of some Sn+4 ions to Sn+2 as a possible charge compensation mechanism. Crown Copyright (C) 2013 Published by Elsevier B. V. All rights reserved.
引用
收藏
页码:5 / 11
页数:7
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