Kinetics and mechanism of atomic force microscope local oxidation on hydrogen-passivated silicon in inert organic solvents

被引：29

作者：

Kinser, C. Reagan ^{[1
]}

Schmitz, Matthew J. ^{[1
]}

Hersam, Mark C. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 11期

关键词：

D O I：

10.1002/adma.200501231

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Conductive atomic force microscope (AFM) nanopatterning on hydrogen-terminated silicon in a hydrophobic organic solvent under ambient conditions produces features consistent with AFM field-induced oxidation. The growth rate of the oxide features (see figure) exhibits modulation consistent with a space-charge-limited growth mechanism.

引用

页码：1377 / +

页数：5

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