Millimeter-Wave and Terahertz CMOS Design

被引：0
|
作者：
Fujishima, Minoru [1 ]
机构：
[1] Hiroshima Univ, Grad Sch Frontier Sci Matter, Higashihiroshima 7398530, Japan
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application, however, a short-millimeter-wave band (more than 100 GHz) is used since it can potentially provide a wider frequency band. Thus, we have studied D-band (110 - 170 GHz) CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the short-millimeter-wave band, since only an insufficient device model is provided, research has to start from device modeling. In this paper, our studies of modeling and design for D-band CMOS circuits are described. Finally, a 10 Gbps, 135 GHz wireless transceiver with a power consumption of 98 mW is demonstrated.
引用
收藏
页码：172 / 175
页数：4
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