Photoluminescence from Zinc Oxide Quantum Dots Embedded in Silicon Dioxide Matrices

被引：11
作者：
Zhong, Kun [1 ]
机构：
[1] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Nanjing, Jiangsu, Peoples R China
来源：
SPECTROSCOPY LETTERS | 2013年 / 46卷 / 03期
关键词：
photoluminescence; SPR defect; ZnO QDS; ZNO; LUMINESCENCE; BAND;
D O I：
10.1080/00387010.2012.704475
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
ZnO quantum dots (QDs) embedded in SiO2 matrix are fabricated by ion implantation and annealing treatment methods. When the Zn-doping dose is (2, 3, 5, and 7)x10(16)cm(-2), the size of quantum dots is in the range of approximate to 4-10nm in diameter according to the XRD and HR-TEM results. Ultraviolet and green light emissions from the specimen are obtained at room temperature. With the increase of the Zn-doping dose, the PL peak in the ultraviolet region red shifts from 3.32 to 3.10eV. This PL peak is related to the size of ZnO QDs, which is ascribed to the free exciton recombination in QDs. The green light emissions centered at 2.43 and 2.25eV are independent of the Zn-doping dose and annealing temperature, which are attributed to the deep-level defect and the small peroxy radical (SPR) defect, respectively.
引用
收藏
页码：160 / 164
页数：5
相关论文
共 50 条
[31]   Cathodoluminescence and photoluminescence of swift ion irradiation modified zinc oxide-porous silicon nanocomposite [J].
Kumar, Yogesh ;
Herrera, Manuel ;
Singh, Fouran ;
Olive-Mendez, S. F. ;
Kanjilal, D. ;
Kumar, Shiv ;
Agarwal, V. .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (16) :1476-1481
[32]   Tuning photoluminescence of reduced graphene oxide quantum dots from blue to purple [J].
Liu, Fuchi ;
Tang, Tao ;
Feng, Qian ;
Li, Ming ;
Liu, Yuan ;
Tang, Nujiang ;
Zhong, Wei ;
Du, Youwei .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (16)
[33]   Photoluminescence Intensity Enhancement of Single Silicon Quantum Dots on a Metal Membrane with a Spacer [J].
Zhou, Jingjian ;
Pevere, Federico ;
Gatty, Hithesh K. ;
Linnros, Jan ;
Sychugov, Ilya .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (04)
[34]   Energy Transfer Induced by Carbon Quantum Dots in Porous Zinc Oxide Nanocomposite Films [J].
Suzuki, Kazumasa ;
Malfatti, Luca ;
Carboni, Davide ;
Loche, Danilo ;
Casula, Maria ;
Moretto, Alessandro ;
Maggini, Michele ;
Takahashi, Masahide ;
Innocenzi, Plinio .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (05) :2837-2843
[35]   Light absorption in silicon quantum dots embedded in silica [J].
Mirabella, S. ;
Agosta, R. ;
Franzo, G. ;
Crupi, I. ;
Miritello, M. ;
Lo Savio, R. ;
Di Stefano, M. A. ;
Di Marco, S. ;
Simone, F. ;
Terrasi, A. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
[36]   Comparative study of photoluminescence in silicon and zinc oxide nanowires [J].
Rudko, G. Yu. ;
Klimovskaya, A. I. .
INTER ACADEMIA 2010: GLOBAL RESEARCH AND EDUCATION, 2011, 222 :189-192
[37]   Broadband visible emission from photoelectrochemical etched porous silicon quantum dots containing zinc [J].
Almomani, Mohammad S. ;
Ahmed, Naser M. ;
Rashid, Marzaini ;
Almessiere, M. A. ;
Altowyan, Abeer S. .
MATERIALS CHEMISTRY AND PHYSICS, 2021, 258
[38]   Photoluminescence of Porous Silicon–Zinc Oxide Hybrid structures [J].
I. B. Olenych ;
L. S. Monastyrskii ;
A. P. Luchechko .
Journal of Applied Spectroscopy, 2017, 84 :66-70
[39]   Zinc Phosphate glasses embedded CdS quantum dots for LED lightening application [J].
Okasha, Aly ;
Abdelghany, A. M. .
JOURNAL OF OPTICS-INDIA, 2023, 52 (04) :2207-2213
[40]   PHOTOLUMINESCENCE OF POROUS SILICON WITH INSERTED CdSe/ZnS QUANTUM DOTS [J].
Jarimaviciute-Zvalioniene, R. ;
Kaminiska, A. ;
Waluk, J. ;
Prosycevas, I. .
3RD INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2010, 2010, :345-348
12345