Photoluminescence from Zinc Oxide Quantum Dots Embedded in Silicon Dioxide Matrices

被引：11

作者：

Zhong, Kun ^{[1
]}

机构：

[1] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Nanjing, Jiangsu, Peoples R China

来源：

SPECTROSCOPY LETTERS | 2013年 / 46卷 / 03期

关键词：

photoluminescence; SPR defect; ZnO QDS; ZNO; LUMINESCENCE; BAND;

D O I：

10.1080/00387010.2012.704475

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

ZnO quantum dots (QDs) embedded in SiO2 matrix are fabricated by ion implantation and annealing treatment methods. When the Zn-doping dose is (2, 3, 5, and 7)x10(16)cm(-2), the size of quantum dots is in the range of approximate to 4-10nm in diameter according to the XRD and HR-TEM results. Ultraviolet and green light emissions from the specimen are obtained at room temperature. With the increase of the Zn-doping dose, the PL peak in the ultraviolet region red shifts from 3.32 to 3.10eV. This PL peak is related to the size of ZnO QDs, which is ascribed to the free exciton recombination in QDs. The green light emissions centered at 2.43 and 2.25eV are independent of the Zn-doping dose and annealing temperature, which are attributed to the deep-level defect and the small peroxy radical (SPR) defect, respectively.

引用

页码：160 / 164

页数：5

共 17 条

[1] Sol-gel derived Li-Mg co-doped ZnO films: Preparation and characterization via XRD, XPS, FESEM [J].

Aksoy, Seval ;

Caglar, Yasemin ;

Ilican, Saliha ;

Caglar, Mujdat .

JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 512 (01) :171-178

[2] Investigation on UV photodetector behavior of RF-sputtered ZnO by impedance spectroscopy [J].

Al-Hardan, N. H. ;

Abdullah, M. J. ;

Ahmad, H. ;

Aziz, A. Abdul ;

Low, L. Y. .

SOLID-STATE ELECTRONICS, 2011, 55 (01) :59-63

[3] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].

BRUS, LE .

JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :4403-4409

[4] Nano-structure study of ZnO thin films on sapphire grown with different temperature conditions [J].

Chin, Shu-Cheng ;

Chi, Chun-Yung ;

Lu, Yen-Cheng ;

Hong, Lin ;

Lin, Yu-Li ;

Jen, Fang-Yi ;

Yang, C. C. ;

Zhang, Bao-Ping ;

Segawa, Yusaburo ;

Ma, Kung-Jen ;

Yang, Jer-Ren .

JOURNAL OF CRYSTAL GROWTH, 2006, 293 (02) :344-350

[5] Investigation of luminescence properties of ZnO nanowires at room temperature [J].

He Yong-ning ;

Shang Shi-guang ;

Cui Wuyuan ;

Li Xun ;

Zhu Chang-chun ;

Hou Xun .

MICROELECTRONICS JOURNAL, 2009, 40 (03) :517-519

[6] The preparation and characterization of ZnO ultrafine particles [J].

Jing, LQ ;

Xu, ZL ;

Shang, J ;

Sun, XJ ;

Cai, WM ;

Guo, HC .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2002, 332 (1-2) :356-361

[7]

Liao LS, 1996, APPL PHYS LETT, V68, P850, DOI 10.1063/1.116554

[8] Characterization of optoelectronic properties of the ZnO nanorod array using surface photovoltage technique [J].

Liu, Yiting ;

Liu, Aimin ;

Liu, Weifeng ;

Hu, Zengquan ;

Sang, Yongchang .

APPLIED SURFACE SCIENCE, 2010, 257 (04) :1263-1266

[9] Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering -: art. no. 103509 [J].

Ma, JG ;

Liu, YC ;

Xu, CS ;

Liu, YX ;

Shao, CL ;

Xu, HY ;

Zhang, JY ;

Lu, YM ;

Shen, DZ ;

Fan, XW .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[10] The UV and blue light emission properties of Mn doped ZnO nanocrystals [J].

Ma, Xiying ;

Wang, Zui .

MICROELECTRONIC ENGINEERING, 2011, 88 (10) :3168-3171

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