Long-wavelength emission in photo-pumped GaAs1-xBix laser with low temperature dependence of lasing wavelength

被引：39

作者：

Fuyuki, Takuma ^{[1
]}

Yoshioka, Ryo ^{[1
]}

Yoshida, Kenji ^{[1
]}

Yoshimoto, Masahiro ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 20期

基金：

日本学术振兴会;

关键词：

BAND-GAP; SEMICONDUCTOR; GROWTH; BI;

D O I：

10.1063/1.4830273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study demonstrates long-wavelength emission of up to 1204 nm in photo-pumped GaAs1-xBix lasers grown by molecular beam epitaxy under low temperature conditions. The characteristic temperature (T-0) between 20 and 80 degrees C in the GaAs1-xBix lasers with Al0.3Ga0.7As electron blocking layer is approximately 100 K, which is larger than that of the typical 1.3-mu m InGaAsP Fabry-Perot laser diodes (FP-LDs; T-0 = 66 K). The temperature coefficient of the lasing wavelength is approximately 40% of that of InGaAsP FP-LDs. (C) 2013 AIP Publishing LLC.

引用

页数：4

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