Influence of Ar/O2 ratio on the prpoperties of transparent conducting ZnO:Zr films deposited by DC reactive magnetron sputtering

被引：0
作者：
Zhang, Huafu [1 ]
Wang, Xinfeng [1 ]
机构：
[1] Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China
来源：
ADVANCED MATERIALS AND STRUCTURES, PTS 1 AND 2 | 2011年 / 335-336卷
关键词：
ZnO:Zr; Transparent conducting oxide films; Reactive magnetron sputtering; Ar/O-2; ratio; THIN-FILMS;
D O I：
10.4028/www.scientific.net/AMR.335-336.964
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O-2 ambience with different Ar/O-2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV-vis spectrophotometers. When Ar/O-2 ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O-2 ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O-2 ratio of 25:1 have the minimum resistivity of 1.4x10(-3) Omega.cm and a high transmittance of above 92%.
引用
收藏
页码：964 / 967
页数：4
相关论文
共 50 条
[1]   Comparative study of the properties between transparent conducting ZnO:Zr and ZnO:Al films deposited by DC magnetron sputtering [J].
Zhang, Huafu ;
Liu, Hanfa ;
Yuan, Changkun .
MATERIALS AND DESIGN, PTS 1-3, 2011, 284-286 :2182-+
[2]   Mn-doped ZnO transparent conducting films deposited by DC magnetron sputtering [J].
Zhang, Hua-fu ;
Liu, Rui-jin ;
Liu, Han-fa ;
Lei, Cheng-xin ;
Feng, Dong-tai ;
Yuan, Chang-Kun .
MATERIALS LETTERS, 2010, 64 (05) :605-607
[3]   Optical and electronic properties of CrOxNy films, deposited by reactive DC magnetron sputtering in Ar/N2/O2(N2O) atmospheres [J].
Mientus, R ;
Grötschel, R ;
Ellmer, K .
SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4) :341-345
[4]   Low-temperature deposition of transparent conducting ZnO:Zr films on PET substrates by DC magnetron sputtering [J].
Zhang, Huafu ;
Lei, Chengxin ;
Liu, Hanfa ;
Yuan, Changkun .
APPLIED SURFACE SCIENCE, 2009, 255 (11) :6054-6056
[5]   Low resistivity transparent conducting CdO thin films deposited by DC reactive magnetron sputtering at room temperature [J].
Zhou, Qiang ;
Ji, Zhenguo ;
Hu, BinBin ;
Chen, Chen ;
Zhao, Lina ;
Wang, Chao .
MATERIALS LETTERS, 2007, 61 (02) :531-534
[6]   Effect of O2 flow rate on the characteristics of ZnO thin films deposited by RF reactive magnetron sputtering [J].
Kamble, Sudhir S. ;
Radhakrishnan, J. K. ;
Krishnamoorthy, Rajavel .
MATERIALS TECHNOLOGY, 2018, 33 (11) :709-715
[7]   Influence of O2/Ar ratio on properties of transparent conductive tantalum-doped ZnO films [J].
Cao, F. ;
Wang, Y. ;
Liu, D. .
ELECTRONICS LETTERS, 2009, 45 (06) :324-325
[8]   Tungsten-doped ZnO transparent conducting films deposited by direct current magnetron sputtering [J].
Zhang, Huafu ;
Liu, Hanfa ;
Lei, Chengxin ;
Yuan, Changkun ;
Zhou, Aiping .
VACUUM, 2010, 85 (02) :184-186
[9]   Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films [J].
CAO Feng .
Science Bulletin, 2009, (13) :2217-2220
[10]   Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films [J].
Cao Feng ;
Wang YiDing ;
Liu KuiXue ;
Yin JingZhi ;
Long BeiHong ;
Li Li ;
Zhang Yu ;
Chen XiaMei .
CHINESE SCIENCE BULLETIN, 2009, 54 (13) :2217-2220
12345