Silicon Nanostructures Formed by Metal-Assisted Chemical Etching for Electron Field Emission Cathodes

被引：0
|
作者：
Evtukh, Anatoliy [1 ]
Steblova, Olga [1 ]
Bratus', Oleg [1 ]
Druzhinin, Anatoly [2 ]
Nichkalo, Stepan [2 ]
机构：
[1] V Lashkarvov Inst Semicond Phys, Nauki Ave 41, UA-03028 Kiev, Ukraine
[2] Lviv Polytech Natl Univ, S Bandera Str 12, UA-79013 Lvov, Ukraine
来源：
2016 13TH INTERNATIONAL CONFERENCE ON MODERN PROBLEMS OF RADIO ENGINEERING, TELECOMMUNICATIONS AND COMPUTER SCIENCE (TCSET) | 2016年
关键词：
Electron field emission; cCathodes; Metal-assisted chemical etching; Silicon; SOLAR-CELLS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The formation of silicon tips and nanoporous Si surfaces by metal-assisted chemical etching method has been performed. The electron field emission from sharp silicon nanostructures has been investigated. The influence of residual gas in vacuum chamber has been observed and explained by formation of the negative dipoles on the surface due to the adsorption of oxygen.
引用
收藏
页码：384 / 387
页数：4
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