ΩFETs transistors with TiN metal gate and HfO2 down to 10nm

被引：0

作者：

Jahan, C ^{[1
]}

Faynot, O ^{[1
]}

Cassé, M ^{[1
]}

Ritzenthaler, R ^{[1
]}

Brévard, L ^{[1
]}

Tosti, L ^{[1
]}

Garros, X ^{[1
]}

Vizioz, C ^{[1
]}

Allain, F ^{[1
]}

Papon, AM ^{[1
]}

Dansas, H ^{[1
]}

Martin, F ^{[1
]}

Vinet, M ^{[1
]}

Guillaumot, B ^{[1
]}

Toffoli, A ^{[1
]}

Giffard, B ^{[1
]}

Deleonibus, S ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

来源：

2005 Symposium on VLSI Technology, Digest of Technical Papers | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

For the first time, TiN metal gate and high K gate dielectric (HfO2) have been successfully integrated on non planar Omega FETs transistors, with gate lengths down to 10nm. NMOS transistors exhibit an excellent I-ON/I-OFF ratio of 5. 10(5), the best value ever reported for a 10nm non planar device. The use of HfO2 reduces the gate leakage current by several orders of magnitude, for EOT of 1.92nm. Very low off-currents are measured with high on-currents, demonstrating the interest of such devices for low power applications.

引用

页码：112 / 113

页数：2

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