Hydrogen-induced buckling of gold films

被引:16
作者
Eren, B. [1 ]
Marot, L. [1 ]
Guenzburger, G. [1 ]
Renault, P-O [2 ]
Glatzel, Th [1 ]
Steiner, R. [1 ]
Meyer, E. [1 ]
机构
[1] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland
[2] Univ Poitiers, CNRS, Inst Pprime, ENSMA,SP2MI, F-86962 Futuroscope, France
关键词
thin film buckling; blister; hydrogen plasma; gold; X-RAY-DIFFRACTION; INTRINSIC STRESS; PLASMA EXPOSURE; THIN; SILICON; POLYCRYSTALLINE; STABILITY; DIFFUSION; SURFACE; MODEL;
D O I
10.1088/0022-3727/47/2/025302
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, 100 nm gold films with -30 +/- 6 MPa residual compressive stress grown by the Volmer-Weber mechanism are exposed to low-flux, low-temperature hydrogen plasma. The films, which were free of any type of blisters prior to plasma treatment, exhibited plenty of buckling zones localized inside circular boundaries after the treatment. This is attributed to compressive stress exerted by the over-pressurized hydrogen gas at the trap zones in the film and at the coating interface. The geometrical parameters of the circular buckling zones indicate a compressive stress of -1.2 +/- 0.3 GPa. The findings reveal a serious concern for technological applications involving hydrogen plasma treatment of samples containing thin gold films, but from an optimistic perspective, suggest an efficient cleavage technique for such films. Several methods including reducing the ion impact energy, increasing the sample temperature and changing the substrate material are investigated to suppress hydrogen-induced buckling. Among these, reducing the impact energy of the ions appeared to be the only effective method.
引用
收藏
页数:7
相关论文
共 48 条
[1]   MEASUREMENTS OF THE INTRINSIC STRESS IN THIN METAL-FILMS [J].
ABERMANN, R .
VACUUM, 1990, 41 (4-6) :1279-1282
[2]  
[Anonymous], THESIS U VERMONT
[3]  
[Anonymous], 1997, STRUCTURAL RESIDUAL, DOI DOI 10.1016/B978-0-444-82476-9.X5000-2
[4]  
[Anonymous], THIN SOLID FILMS
[5]  
[Anonymous], SRIM 2006 COMPUTER C
[6]  
[Anonymous], APPL SURF SCI
[7]   Stability of straight delamination blisters [J].
Audoly, B .
PHYSICAL REVIEW LETTERS, 1999, 83 (20) :4124-4127
[8]   Application of hydrogen ion beams to Silicon On Insulator material technology [J].
Bruel, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 108 (03) :313-319
[9]   Surface stress model for intrinsic stresses in thin films [J].
Cammarata, RC ;
Trimble, TM ;
Srolovitz, DJ .
JOURNAL OF MATERIALS RESEARCH, 2000, 15 (11) :2468-2474
[10]   Origin of compressive residual stress in polycrystalline thin films [J].
Chason, E ;
Sheldon, BW ;
Freund, LB ;
Floro, JA ;
Hearne, SJ .
PHYSICAL REVIEW LETTERS, 2002, 88 (15) :4