Influence of deposition parameter on chemical structure and moisture resistant properties for SiNx films deposited by DC pulse magnetron sputtering

被引：7
作者：
Ding Wan-Yu [1 ,2 ]
Wang Hua-Lin [1 ,2 ]
Miao Zhuang [3 ]
Zhang Jun-Ji [1 ,2 ]
Chai Wei-Ping [1 ,2 ]
机构：
[1] Dalian Jiaotong Univ, Inst Optoelect Mat & Device, Dalian 116028, Peoples R China
[2] Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
[3] Natl Ctr Packaging Prod Quality Supervis & Inspec, Dalian 116028, Peoples R China
来源：
ACTA PHYSICA SINICA | 2009年 / 58卷 / 01期
关键词：
SiNx; magnetron sputtering; microstructure; water vapor permeability; PLASMA;
D O I：
10.7498/aps.58.432
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Hydrogen-free SiNx films were deposited by direct current pulse magnetron sputtering at room temperature. We have Studied the influence of N-2 flow rate and Si target sputtering power on the structural characteristics and properties of deposited films by using Fourier-transform infrared spectroscopy, auto water vapor permeability tester, ultraviolet-visible spectrophotometer, stylus profilometer,and contact angle measurement. The results indicate that the content of Si-O bonding in SiNx films increaseds and moisture resistant property of SiNx films decreases with increasing N-2 flow rate or decreasing Si target Sputtering power. The films deposited at 300 W of Si sputtering power and 6 seem of N-2 flow rate show excellent water vapor permeability (0.764) with transmittance higher than 97.5% in visible range.
引用
收藏
页码：432 / 437
页数：6
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