Investigation of the effects of byproduct components in Cu plating for advanced interconnect metallization

被引：37

作者：

Koh, LT ^{[1
]}

You, GZ ^{[1
]}

Li, CY ^{[1
]}

Foo, PD ^{[1
]}

机构：

[1] Inst Microelect, Dept Deep Submicron Integrated Circuit Technol, Singapore 117685, Singapore

来源：

MICROELECTRONICS JOURNAL | 2002年 / 33卷 / 03期

关键词：

copper electroplating; high performance liquid chromatography; aged bath; gap fill; additive byproducts;

D O I：

10.1016/S0026-2692(01)00122-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the effects of byproduct components generated from a commercially available two components additive package on the copper plating performance for advanced interconnect metallization. The increase in accumulative breakdown products from the sulfur-containing type-A additive during the electroplating (ECP) process, measured using high performance liquid chromatography (HPLC), showed a detrimental effect on via fill performance. These vias with voids may fail by open circuit sooner due to electromigration. Besides, increase of in-film sulfur content was found from the analysis of secondary-ion mass spectrometry (SEWS) on the film electroplated using heavily used plating solution. It was suggested that the increase of incorporated sulfur impurities could render in slower self-annealing rate of the as-plated copper film due to the grain boundary pinning effect. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：229 / 234

页数：6

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