Gate-Recessed Integrated E/D GaN HEMT Technology With fT/fmax >300 GHz

被引：87

作者：

Schuette, Michael L. ^{[1
]}

Ketterson, Andrew ^{[1
]}

Song, Bo ^{[2
]}

Beam, Edward ^{[1
]}

Chou, Tso-Min ^{[1
]}

Pilla, Manyam ^{[1
]}

Tserng, Hua-Quen ^{[1
]}

Gao, Xiang ^{[3
]}

Guo, Shiping ^{[3
]}

Fay, Patrick J. ^{[2
]}

Xing, Huili Grace ^{[2
]}

Saunier, Paul ^{[1
]}

机构：

[1] TriQuint Semicond Inc, Richardson, TX 75080 USA

[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[3] IQE RF LLC, Somerset, NJ 08873 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 06期

关键词：

Cutoff frequency; enhancement mode; high-electronmobility transistor (HEMT); InAlN; monolithic integration; RESISTANCE;

D O I：

10.1109/LED.2013.2257657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report 1000-transistor-level monolithic circuit integration of sub-30-nm gate-recessed E/D GaN high-electronmobility transistors with f(T) and f(max) above 300 GHz. Simultaneous f(T)/f(max) of 348/340 and 302/301 GHz for E- and D-mode devices, respectively, was measured, representing a 58% increase in f(T) compared with our previous report, due to improved management of RC parasitic delay. Three-terminal E- and D-mode breakdown voltage of 10.7 and 11.8 V, respectively, is limited by gate-drain breakdown.

引用

页码：741 / 743

页数：3

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Gate-Recessed Integrated E/D GaN HEMT Technology With fT/fmax &gt;300 GHz

Gate-Recessed Integrated E/D GaN HEMT Technology With fT/fmax >300 GHz