Toward a demonstration of the non-linear electrical conduction law

被引:4
作者
Rusu, A [1 ]
机构
[1] POLITEHN Univ Bucharest, Fac Elect & Telecommun, Bucharest, Romania
来源
2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS | 2001年
关键词
D O I
10.1109/SMICND.2001.967496
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper makes several considerations about physical phenomena responsible for the electrical conduction linearization in electronic structures. At high-level of injection, the currents flowing in the known conduction media trend to have an important drift component. This fact explains a "rnetal"-like behaviour that involves asymptotic electrical characteristics in this range of high currents.
引用
收藏
页码:413 / 415
页数:3
相关论文
共 3 条
[1]  
Hess K., 2000, Advanced Theory of Semiconductor Devices
[2]  
RUSU A, 1993, 16 INT SEM C SIN ROM, P31
[3]  
RUSU A, 2000, NONLINEAR ELECT COND