Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates

被引：65

作者：

Fei, Fucong ^{[1
,2
]}

Wei, Zhongxia ^{[1
,2
]}

Wang, Qianjin ^{[1
,3
]}

Lu, Pengchao ^{[1
,2
]}

Wang, Shuangbao ^{[1
,3
]}

Qin, Yuyuan ^{[1
,2
]}

Pan, Danfeng ^{[1
,2
]}

Zhao, Bo ^{[1
,2
]}

Wang, Xuefeng ^{[1
,4
]}

Sun, Jian ^{[1
,2
]}

Wang, Xinran ^{[1
,4
]}

Wang, Peng ^{[1
,3
]}

Wan, Jianguo ^{[1
,2
]}

Zhou, Jianfeng ^{[1
,3
]}

Han, Min ^{[1
,4
]}

Song, Fengqi ^{[1
,2
]}

Wang, Baigeng ^{[1
,2
]}

Wang, Guanghou ^{[1
,2
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Coll Phys, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[4] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

NANO LETTERS | 2015年 / 15卷 / 09期

基金：

中国国家自然科学基金;

关键词：

topological insulator; solvothermal synthesis; bismuth telluride; antimony telluride; heterojunction; transport; LINEAR MAGNETORESISTANCE; BORON-NITRIDE; GRAPHENE; GROWTH; BI2TE3; HETEROSTRUCTURES; DYNAMICS; BI2SE3;

D O I：

10.1021/acs.nanolett.5b01987

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvotherrnal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and onedimensional topological interface states.

引用

页码：5905 / 5911

页数：7

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