Field emission properties and synthesis of carbon nanotubes grown by rf plasma-enhanced chemical vapor deposition

被引：8

作者：

Jiang, J ^{[1
]}

Feng, T

Zhang, JH

Cheng, XH

Chao, GB

Jiang, BY

Wang, YJ

Wang, X

Liu, XH

Zou, SC

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 08期

基金：

中国国家自然科学基金;

关键词：

carbon nanotubes; plasma enhanced chemical vapor deposition; growth mechanism; defects;

D O I：

10.1016/j.apsusc.2005.04.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Plasma-enhanced chemical vapor deposition (PECVD) method was employed to grow the Fe-catalyzed carbon nanotubes (CNTs). The grown CNTs with a uniform diameter in the range of about 10-20 nm and the typical lengths beyond 1 mu m resulted in a very high aspect ratio. The Raman and TEM results showed that the grown CNTs contained a large amount of carbonaceous particles and crystal defects, such as Pentagon-heptagon pair defects. XPS measurement indicated that the CNTs had C-H covalent bonds. Field emission characteristics exhibited the low turn-on threshold field of 2.75 V/mu m and the maximum emission current density of 7.75 mA/cm(2) at 6.5 V/mu m. The growth mechanism of CNTs and the effects of hydrogen plasma on their structure were discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：2938 / 2943

页数：6

共 20 条

[1] On-chip vacuum microtriode using carbon nanotube field emitters [J].

Bower, C ;

Zhu, W ;

Shalom, D ;

Lopez, D ;

Chen, LH ;

Gammel, PL ;

Jin, S .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3820-3822

[2] Structural and electronic properties of pentagon-heptagon pair defects in carbon nanotubes [J].

Charlier, JC ;

Ebbesen, TW ;

Lambin, P .

PHYSICAL REVIEW B, 1996, 53 (16) :11108-11113

[3]

CHIEU TC, 1982, PHYS REV B, V26, P10530

[4] A CARBON NANOTUBE FIELD-EMISSION ELECTRON SOURCE [J].

DEHEER, WA ;

CHATELAIN, A ;

UGARTE, D .

SCIENCE, 1995, 270 (5239) :1179-1180

[5] Storage of hydrogen in single-walled carbon nanotubes [J].

Dillon, AC ;

Jones, KM ;

Bekkedahl, TA ;

Kiang, CH ;

Bethune, DS ;

Heben, MJ .

NATURE, 1997, 386 (6623) :377-379

[6] Self-oriented regular arrays of carbon nanotubes and their field emission properties [J].

Fan, SS ;

Chapline, MG ;

Franklin, NR ;

Tombler, TW ;

Cassell, AM ;

Dai, HJ .

SCIENCE, 1999, 283 (5401) :512-514

[7] Performance projections for ballistic carbon nanotube field-effect transistors [J].

Guo, J ;

Lundstrom, M ;

Datta, S .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3192-3194

[8] NEW ONE-DIMENSIONAL CONDUCTORS - GRAPHITIC MICROTUBULES [J].

HAMADA, N ;

SAWADA, S ;

OSHIYAMA, A .

PHYSICAL REVIEW LETTERS, 1992, 68 (10) :1579-1581

[9] HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].

IIJIMA, S .

NATURE, 1991, 354 (6348) :56-58

[10] Correlation of field emission and surface microstructure of vertically aligned carbon nanotubes [J].

Jo, SH ;

Tu, Y ;

Huang, ZP ;

Carnahan, DL ;

Huang, JY ;

Wang, DZ ;

Ren, ZF .

APPLIED PHYSICS LETTERS, 2004, 84 (03) :413-415

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