Controlling Shot Noise in Double-Barrier Magnetic Tunnel Junctions

被引：22
|
作者：
Cascales, J. P. [1 ]
Herranz, D. [1 ]
Aliev, F. G. [1 ]
Szczepanski, T. [2 ]
Dugaev, V. K. [2 ,3 ]
Barnas, J. [4 ,5 ]
Duluard, A. [6 ]
Hehn, M. [6 ]
Tiusan, C. [6 ]
机构：
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain
[2] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland
[3] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany
[4] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland
[5] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
[6] Univ Nancy, Inst Jean Lamour, F-54506 Vandoeuvre Les Nancy, France
来源：
PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 06期
关键词：
ROOM-TEMPERATURE; SPIN PRECESSION; SUPPRESSION; MAGNETORESISTANCE; TORQUE;
D O I：
10.1103/PhysRevLett.109.066601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5 V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5 V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Shot noise in magnetic double-barrier tunnel junctions
    Szczepanski, T.
    Dugaev, V. K.
    Barnas, J.
    Cascales, J. P.
    Aliev, F. G.
    PHYSICAL REVIEW B, 2013, 87 (15)
  • [2] Shot Noise in Epitaxial Double-Barrier Magnetic Tunnel Junctions
    Pedro Cascales, Juan
    Martin, Laura
    Dulluard, Amandine
    Hehn, Michel
    Tiusan, Coriolan
    Szczepanski, Tomasz
    Dugaev, Vitalii
    Barnas, Jozef
    Aliev, Farkhad G.
    IEEE TRANSACTIONS ON MAGNETICS, 2013, 49 (07) : 4347 - 4350
  • [3] 1/f noise in MgO double-barrier magnetic tunnel junctions
    Yu, G. Q.
    Diao, Z.
    Feng, J. F.
    Kurt, H.
    Han, X. F.
    Coey, J. M. D.
    APPLIED PHYSICS LETTERS, 2011, 98 (11)
  • [4] Temperature dependence of shot noise in double barrier magnetic tunnel junctions
    Niu, Jiasen
    Liu, Liang
    Feng, J. F.
    Han, X. F.
    Coey, J. M. D.
    Zhang, X. -G.
    Wei, Jian
    PHYSICAL REVIEW B, 2018, 97 (10)
  • [5] Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance
    Zheng, Xiaohong
    Yang, Shili
    Zheng, Zhifan
    Liu, Chun-Sheng
    Wang, Weiyang
    Zhang, Lei
    APPLIED PHYSICS LETTERS, 2024, 125 (22)
  • [6] Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions
    Useinov, N. Kh.
    Petukhov, D. A.
    Tagirov, L. R.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2015, 373 : 27 - 29
  • [7] Magnetic diode effect in double-barrier tunnel junctions
    Chshiev, M
    Stoeffler, D
    Vedyayev, A
    Ounadjela, K
    EUROPHYSICS LETTERS, 2002, 58 (02): : 257 - 263
  • [8] Tunnel current, conductance and magnetoresistance in double-barrier magnetic tunnel junctions
    Xu, HY
    Kang, J
    Yu, WX
    Mai, ZH
    THIN SOLID FILMS, 2000, 375 (1-2) : 210 - 214
  • [9] Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions
    Useinov, A. N.
    Kosel, J.
    Useinov, N. Kh.
    Tagirov, L. R.
    PHYSICAL REVIEW B, 2011, 84 (08)
  • [10] Resonant Magnetoresistance in Asymmetric Double-Barrier Magnetic Tunnel Junctions
    Useinov, Niazbeck
    Tagirov, Lenar
    20TH INTERNATIONAL CONFERENCE ON MAGNETISM, ICM 2015, 2015, 75 : 995 - 1002
12345