Controlling Shot Noise in Double-Barrier Magnetic Tunnel Junctions

被引：22

作者：

Cascales, J. P. ^{[1
]}

Herranz, D. ^{[1
]}

Aliev, F. G. ^{[1
]}

Szczepanski, T. ^{[2
]}

Dugaev, V. K. ^{[2
,3
]}

Barnas, J. ^{[4
,5
]}

Duluard, A. ^{[6
]}

Hehn, M. ^{[6
]}

Tiusan, C. ^{[6
]}

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain

[2] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland

[3] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany

[4] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland

[5] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

[6] Univ Nancy, Inst Jean Lamour, F-54506 Vandoeuvre Les Nancy, France

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 06期

关键词：

ROOM-TEMPERATURE; SPIN PRECESSION; SUPPRESSION; MAGNETORESISTANCE; TORQUE;

D O I：

10.1103/PhysRevLett.109.066601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5 V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5 V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.

引用

页数：5

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