Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

被引：101

作者：

Ji, Li ^{[1
]}

Chang, Yao-Feng ^{[1
]}

Fowler, Burt ^{[2
]}

Chen, Ying-Chen ^{[5
,6
]}

Tsai, Tsung-Ming ^{[3
]}

Chang, Kuan-Chang ^{[3
]}

Chen, Min-Chen ^{[4
]}

Chang, Ting-Chang ^{[4
]}

Sze, Simon M. ^{[5
,6
]}

Yu, Edward T. ^{[1
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] PrivaTran LLC, Austin, TX 78746 USA

[3] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

NANO LETTERS | 2014年 / 14卷 / 02期

关键词：

1D-1R; ReRAM; Nanosphere Lithography; SiOx; nanopillar; OXIDE; DEVICE; NANOCROSSBAR;

D O I：

10.1021/nl404160u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

引用

页码：813 / 818

页数：6

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