Crystal growth, structural, crystalline perfection, optical and mechanical properties of Nd3+ doped sulfamic acid (SA) single crystals

被引:32
作者
Shkir, Mohd [1 ,2 ,3 ]
Riscob, B. [3 ]
Ganesh, V. [5 ]
Vijayan, N. [3 ]
Gupta, Rahul [4 ]
Plaza, J. L. [1 ]
Dieguez, E. [1 ]
Bhagavannarayana, G. [3 ]
机构
[1] Univ Autonoma Madrid, Dept Fis Mat, Crystal Growth Lab, E-28049 Madrid, Spain
[2] Univ Delhi, AMRL, Dept ofPhys, Atma Ram Sanatan Dharma ARSD Coll, New Delhi 110021, India
[3] CSIR Natl Phys Lab, New Delhi 110012, India
[4] Bruker AXS Analyt Instruments Pvt Ltd, New Delhi 110019, India
[5] Kakatiya Univ, Dept Phys, Warangal 506009, Andhra Pradesh, India
关键词
High resolution X-ray diffraction; Growth from solutions; Single crystal growth; Inorganic compounds; RAMASAMY SR METHOD; CONVENTIONAL SLOW EVAPORATION; SHG EFFICIENCY; MICROHARDNESS; DISLOCATIONS; ENHANCEMENT; DIFFRACTION; SCATTERING; TOUGHNESS; DEFECTS;
D O I
10.1016/j.jcrysgro.2013.06.022
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Sulfamic acid (SA) single crystals, both pure and doped with 1, 2.5 and 5 mol% Nd, were grown successfully in an aqueous solution by the slow cooling method. Powder X-ray diffraction patterns were recorded to check the variation in the lattice parameters and phase of the crystals. The optical transparency was found to be hig Prod. Type: FTPhest (similar to 80%) for the 1 mol% Nd3+ doped SA single crystal. The optical band gap was also calculated and found to be similar to 4.31.4.20 and 3.67 eV. The influence of Nd3+ doping on the crystalline perfection was assessed by a high resolution X-ray diffractometer (HRXRD) and shows that the grown crystals could accommodate Nd3+ at the interstitial positions in the crystalline matrix of SA up to some critical concentration without any deterioration in the crystalline perfection. The etching studies were carried out and the etch pits densities were calculated. The mechanical property of grown single crystals was also studied. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:228 / 235
页数:8
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