Analytical charge collection and MTF model for photodiode-based CMOS imagers

被引：10
作者：
Lin, CSS [1 ]
Mathur, BP
Chang, MCF
机构：
[1] Univ Calif Los Angeles, Elect Engn Dept, High Speed Elect Lab, Los Angeles, CA 90095 USA
[2] Biomorph VLSI Inc, Westlake Village, CA 91362 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 05期
关键词：
charge collection; CMOS imagers; collection efficiency; modulation transfer function; pixel design; quantum efficiency; spatial resolution;
D O I：
10.1109/16.998581
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical charge collection model is derived to assess the impact of the photodiode size, doping profile and surface recombination velocity on the modulation transfer function (MTF) and the charge collection efficiency of CMOS imagers. Effects of the microlens and optical isolation are also quantitatively analyzed. The calculated MTF results agree well with measured data of fabricated imagers based on three different pixel designs.
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页码：754 / 761
页数：8
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